Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4B2G0846D-HYK0 Dram, Memory Density:2.1475 Gbit, Memory Width:8, Organization:256MX8, Supply Voltage-Nom (Vsup):1.35 V, Power Supplies:1.35 V, Access Time-Max:225 ps, Clock Frequency-Max (fCLK):800 MHz, Refresh Cycles:8192
DescriptionDRAM Chip DDR3L SDRAM 2Gbit 256Mx8 1.35V/1.5V 78-Pin FBGA
Description (Existing)Samsung Semiconductor K4B2G0846D-HYK0 Dram, Memory Density:2.1475 Gbit, Memory Width:8, Organization:256MX8, Supply Voltage-Nom (Vsup):1.35 V, Power Supplies:1.35 V, Access Time-Max:225 ps, Clock Frequency-Max (fCLK):800 MHz, Refresh Cycles:8192
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