Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4B2G0846D-HYH9T Dram, Memory Density:2.1475 Gbit, Memory Width:8, Organization:256MX8, Supply Voltage-Nom (Vsup):1.35 V, Power Supplies:1.35 V, Access Time-Max:255 ps, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192
DescriptionSamsung Semiconductor K4B2G0846D-HYH9T Dram, Memory Density:2.1475 Gbit, Memory Width:8, Organization:256MX8, Supply Voltage-Nom (Vsup):1.35 V, Power Supplies:1.35 V, Access Time-Max:255 ps, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192
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