Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung K4B2G0846C-HYF8, â—Š 2Gb Memory Module
DescriptionSamsung Semiconductor K4B2G0846C-HYF8 Dram, Memory Density:2.1475 Gbit, Memory Width:8, Organization:256MX8, Supply Voltage-Nom (Vsup):1.35 V, Access Mode:MULTI BANK PAGE BURST
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Samsung
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Modules
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| # | Name |
|---|---|
| 1 | K4B2G0846C-HYF8, ? |