Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4B2G0446D-HYK0T Dram, Memory Density:2.1475 Gbit, Memory Width:4, Organization:512MX4, Supply Voltage-Nom (Vsup):1.35 V, Power Supplies:1.35 V, Access Time-Max:225 ps, Clock Frequency-Max (fCLK):800 MHz, Refresh Cycles:8192
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Samsung
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Modules
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