Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4B2G0446D-HCH9 Integrated Circuit, K4B2G0446D-HCH9 SAMSUNG
DescriptionSamsung Semiconductor K4B2G0446D-HCH9 Dram, Memory Density:2.1475 Gbit, Memory Width:4, Organization:512MX4, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:255 ps, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192
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