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K4B2G0446C-HYF70

Samsung ยท Modules

Samsung K4B2G0446C-HYF70

Samsung K4B2G0446C-HYF70 overview

Samsung Semiconductor K4B2G0446C-HYF70 Dram, Memory Density:2.1475 Gbit, Memory Width:4, Organization:512MX4, Supply Voltage-Nom (Vsup):1.5 V

Manufactured bySamsung
Part number or familyK4B2G0446C-HYF70
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4B2G0446C-HYF70 Dram, Memory Density:2.1475 Gbit, Memory Width:4, Organization:512MX4, Supply Voltage-Nom (Vsup):1.5 V

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