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Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4B1G1646E-HCK0 Integrated Circuit, K4B1G1646E-HCK0 SAMSUNG
DescriptionSamsung Semiconductor K4B1G1646E-HCK0 Dram, Memory Density:1.0737 Gbit, Memory Width:16, Organization:64MX16, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:100 ps, Clock Frequency-Max (fCLK):800 MHz, Refresh Cycles:8192
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