Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4B1G0846E-HCH9T Dram, Memory Density:1.0737 Gbit, Memory Width:8, Organization:128MX8, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:125 ps, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192
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Samsung
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Modules
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