Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung K4B1G0446F-HYH9, â—Š 1Gb Memory Module
DescriptionSamsung Semiconductor K4B1G0446F-HYH9 Dram, Memory Density:1.0737 Gbit, Memory Width:4, Organization:256MX4, Supply Voltage-Nom (Vsup):1.35 V, Power Supplies:1.35 V, Access Time-Max:255 ps, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192, Access Mode:MULTI BANK PAGE BURST
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Samsung
View Samsung profile
Product group
Modules
Explore Modules
Available from
Sourcing support available
Start a sourcing request
| # | Name |
|---|---|
| 1 | K4B1G0446F-HYH9, ? |