Product details
Manufactured bySamsung
Product groupModules
DescriptionSAMSUNG K4B1G0446F-HCF8 Integrated Circuit, K4B1G0446F-HCF8 SAMSUNG
DescriptionSamsung Semiconductor K4B1G0446F-HCF8 Dram, Memory Density:1.0737 Gbit, Memory Width:4, Organization:256MX4, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:300 ps, Clock Frequency-Max (fCLK):533 MHz, Refresh Cycles:8192
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