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K4B1G0446C-ZCG90

Samsung ยท Modules

Samsung K4B1G0446C-ZCG90

Samsung K4B1G0446C-ZCG90 overview

Samsung Semiconductor K4B1G0446C-ZCG90 Dram, Memory Density:1.0737 Gbit, Memory Width:4, Organization:256MX4, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1....

Manufactured bySamsung
Part number or familyK4B1G0446C-ZCG90
Product groupModules

Product details

Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor K4B1G0446C-ZCG90 Dram, Memory Density:1.0737 Gbit, Memory Width:4, Organization:256MX4, Supply Voltage-Nom (Vsup):1.5 V, Power Supplies:1.5 V, Access Time-Max:255 ps, Clock Frequency-Max (fCLK):667 MHz, Refresh Cycles:8192, Access Mode:MULTI BANK PAGE BURST

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