Samsung M470T6464EHS-CE7 overview
Samsung Semiconductor M470T6464EHS-CE7 Dram, Memory Density:536.8709 Mbit, Memory Width:16, Organization:32MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:400 ps, Clock Frequency-Max (fCLK):400 MHz, Refresh Cycles:8192, Access Mode:SINGLE BANK PAGE BURST DRAM Module DDR2...
What is Samsung M470T6464EHS-CE7?
Samsung Semiconductor M470T6464EHS-CE7 Dram, Memory Density:536.8709 Mbit, Memory Width:16, Organization:32MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:400 ps, Clock Frequency-Max (fCLK):400 MHz, Refresh Cycles:8192, Access Mode:SINGLE BANK PAGE BURST DRAM Module DDR2...
Product details
Manufactured bySamsung
Product groupModules
DescriptionSamsung Semiconductor M470T6464EHS-CE7 Dram, Memory Density:536.8709 Mbit, Memory Width:16, Organization:32MX16, Supply Voltage-Nom (Vsup):1.8 V, Power Supplies:1.8 V, Access Time-Max:400 ps, Clock Frequency-Max (fCLK):400 MHz, Refresh Cycles:8192, Access Mode:SINGLE BANK PAGE BURST
Description 1786358774DRAM Module DDR2 SDRAM 512Mbyte 200SODIMM
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