Rohm Semiconductor UT6MA3TCR overview
ROHM Semiconductor UT6MA3TCR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS...
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Manufactured byRohm Semiconductor
Product groupTransistor
DescriptionROHM Semiconductor UT6MA3TCR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (ID):5.5 A, Drain-source On Resistance-Max:42 mΩ
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