Rohm Semiconductor RT1C060UNTR overview
ROHM Semiconductor RT1C060UNTR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Numb...
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Manufactured byRohm Semiconductor
Product groupTransistor
DescriptionROHM Semiconductor RT1C060UNTR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:1, Drain Current-Max (Abs) (ID):6 A, Drain Current-Max (ID):6 A, Drain-source On Resistance-Max:33 mΩ
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