Rohm Semiconductor RQ3E080BNTB overview
ROHM Semiconductor RQ3E080BNTB Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Numb...
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Manufactured byRohm Semiconductor
Product groupTransistor
DescriptionROHM Semiconductor RQ3E080BNTB Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (ID):8 A, Drain-source On Resistance-Max:22 mΩ
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