Rohm Semiconductor QS8M51TR overview
ROHM Semiconductor QS8M51TR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS ...
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Manufactured byRohm Semiconductor
Product groupTransistor
DescriptionROHM Semiconductor QS8M51TR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:100 V, Number of Elements:2, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:355 mΩ
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