Rohm Semiconductor QS8J12TCR overview
ROHM Semiconductor QS8J12TCR Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN...
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Manufactured byRohm Semiconductor
Product groupTransistor
DescriptionROHM Semiconductor QS8J12TCR Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:12 V, Number of Elements:2, Drain Current-Max (Abs) (ID):4.5 A, Drain Current-Max (ID):4.5 A, Drain-source On Resistance-Max:29 mΩ
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Rohm Semiconductor
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