Rohm Semiconductor QS6J11TR overview
ROHM Semiconductor QS6J11TR Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN ...
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Manufactured byRohm Semiconductor
Product groupTransistor
DescriptionROHM Semiconductor QS6J11TR Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:12 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2 A, Drain Current-Max (ID):2 A, Drain-source On Resistance-Max:105 mΩ
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