Rohm Semiconductor HP8S36TB overview
ROHM Semiconductor HP8S36TB Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELE...
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Manufactured byRohm Semiconductor
Product groupTransistor
DescriptionROHM Semiconductor HP8S36TB Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (ID):12 A, Drain-source On Resistance-Max:13.3 mΩ
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