Rohm Semiconductor BSM180D12P3C007 overview
ROHM Semiconductor BSM180D12P3C007 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SERIES CONNECTED, CENTER TAP,...
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Manufactured byRohm Semiconductor
Product groupTransistor
DescriptionROHM Semiconductor BSM180D12P3C007 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:10, DS Breakdown Voltage-Min:1.2 kV, Number of Elements:2, Drain Current-Max (Abs) (ID):22 A, Drain Current-Max (ID):180 A
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