Rohm Semiconductor RSB33F2T106 overview
ROHM Semiconductor RSB33F2T106 Transient Suppressor, Power Dissipation-Max:200 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:29.7 V, Diode Type:TRAN...
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Manufactured byRohm Semiconductor
DescriptionROHM Semiconductor RSB33F2T106 Transient Suppressor, Power Dissipation-Max:200 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:29.7 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:BIDIRECTIONAL, Configuration:COMMON ANODE, 2 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:25 V, Number of Elements:2, Technology:AVALANCHE
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