Rohm Semiconductor FTZ30EFHT148 overview
ROHM Semiconductor FTZ30EFHT148 Transient Suppressor, Reverse Current-Max:100 nA, Power Dissipation-Max:200 mW, Breakdown Voltage-Nom:29.94 V, Diode Element Mat...
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Manufactured byRohm Semiconductor
Product groupModules
DescriptionROHM Semiconductor FTZ30EFHT148 Transient Suppressor, Reverse Current-Max:100 nA, Power Dissipation-Max:200 mW, Breakdown Voltage-Nom:29.94 V, Diode Element Material:SILICON, Breakdown Voltage-Min:29.19 V, Diode Type:TRANS VOLTAGE SUPPRESSOR DIODE, Polarity:UNIDIRECTIONAL, Configuration:COMMON ANODE, 4 ELEMENTS, Surface Mount:YES, Rep Pk Reverse Voltage-Max:23 V, Number of Elements:4, Technology:ZENER
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