Rohm Semiconductor QS6M3 overview
ROHM Semiconductor QS6M3 Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface mount:YES, Configuration:SEPARATE, 2 ELEME...
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Manufactured byRohm Semiconductor
Product groupModules
DescriptionROHM Semiconductor QS6M3 Small Signal Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:6, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (Abs) (ID):1.5 A, Drain Current-Max (ID):1.5 A, Drain-source On Resistance-Max:245 mΩ
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