Rohm Semiconductor RT1E060XNTCR overview
ROHM Semiconductor RT1E060XNTCR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number...
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Manufactured byRohm Semiconductor
Product groupModules
DescriptionROHM Semiconductor RT1E060XNTCR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:30 V,Number of Elements:1,Drain Current-Max (Abs) (ID):6 A,Drain Current-Max (ID):6 A,Drain-source On Resistance-Max:32 m?
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