Rohm Semiconductor RS1E220ATTB1 overview
ROHM Semiconductor RS1E220ATTB1 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Num...
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Manufactured byRohm Semiconductor
Product groupModules
DescriptionROHM Semiconductor RS1E220ATTB1 Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:5, DS Breakdown Voltage-Min:30 V, Number of Elements:1, Drain Current-Max (ID):22 A, Drain-source On Resistance-Max:5.8 mΩ
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