Rohm Semiconductor RF4L055GNTCR overview
RF4L055GNTCR is made by Rohm Semiconductor. ROHM Semiconductor RF4L055GNTCR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:6,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (ID):5.5 A,Drain-source On…
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Part number or familyRF4L055GNTCR
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Manufactured byRohm Semiconductor
DescriptionROHM Semiconductor RF4L055GNTCR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:6,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (ID):5.5 A,Drain-source On Resistance-Max:66 m?
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