Rohm Semiconductor R5013ANX overview
ROHM Semiconductor R5013ANX Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of T...
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Manufactured byRohm Semiconductor
Product groupModules
DescriptionROHM Semiconductor R5013ANX Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:500 V,Number of Elements:1,Drain Current-Max (ID):13 A,Drain-source On Resistance-Max:380 m?
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