Rohm Semiconductor QS8K12TCR overview
ROHM Semiconductor QS8K12TCR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN D...
Manufactured byRohm Semiconductor
Part number or familyQS8K12TCR
Product typeProduct type not listed yet
Product details
Manufactured byRohm Semiconductor
DescriptionROHM Semiconductor QS8K12TCR Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:30 V,Number of Elements:2,Drain Current-Max (Abs) (ID):4 A,Drain Current-Max (ID):4 A,Drain-source On Resistance-Max:63 m?
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Rohm Semiconductor
View Rohm Semiconductor profile
Product type
Product type not listed yet
Available from
Sourcing support available
Start a sourcing request