Rohm Semiconductor QS8F2TR overview
ROHM Semiconductor QS8F2TR Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN BIPOLAR TRANSIS...
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Manufactured byRohm Semiconductor
Product groupModules
DescriptionROHM Semiconductor QS8F2TR Power Field-effect Transistor, Polarity/Channel Type:P-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN BIPOLAR TRANSISTOR AND DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:12 V, Number of Elements:1, Drain Current-Max (Abs) (ID):2.5 A, Drain Current-Max (ID):2.5 A, Drain-source On Resistance-Max:61 mΩ
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