Rohm Semiconductor HS8K1TB overview
ROHM Semiconductor HS8K1TB Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMPLEX, Number of Terminals:8, DS B...
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Manufactured byRohm Semiconductor
Product groupModules
DescriptionROHM Semiconductor HS8K1TB Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:COMPLEX, Number of Terminals:8, DS Breakdown Voltage-Min:30 V, Number of Elements:2, Drain Current-Max (ID):10 A, Drain-source On Resistance-Max:20 mΩ
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