Rohm Semiconductor HP8MA2TB1 overview
ROHM Semiconductor HP8MA2TB1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS W...
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Manufactured byRohm Semiconductor
Product groupModules
DescriptionROHM Semiconductor HP8MA2TB1 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:6,DS Breakdown Voltage-Min:30 V,Number of Elements:2,Drain-source On Resistance-Max:16.5 m?
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