Rohm Semiconductor BA12002 overview
ROHM Semiconductor BA12002 Power Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):500 mΩ, Polarity/Channel Type:NPN, Surface ...
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Manufactured byRohm Semiconductor
Product groupModules
DescriptionROHM Semiconductor BA12002 Power Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):500 mΩ, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:COMPLEX, Number of Terminals:16, Number of Elements:7, DC Current Gain-Min (hFE):1000
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