Rohm Semiconductor 4AE12 overview
ROHM Semiconductor 4AE12 Power Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:NPN AND PNP, Surfac...
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Manufactured byRohm Semiconductor
Product groupModules
DescriptionROHM Semiconductor 4AE12 Power Bipolar Transistor, Collector-Emitter Voltage-Max:50 V, Collector Current-Max (IC):3 A, Polarity/Channel Type:NPN AND PNP, Surface mount:NO, Configuration:2 BANKS, COMMON EMITTER, 2 ELEMENTS, Number of Terminals:10, Number of Elements:4, DC Current Gain-Min (hFE):60
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