Rohm Semiconductor 2SD2008T105R overview
2SD2008T105R is made by Rohm Semiconductor. ROHM Semiconductor 2SD2008T105R Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):180
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Part number or family2SD2008T105R
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Manufactured byRohm Semiconductor
DescriptionROHM Semiconductor 2SD2008T105R Power Bipolar Transistor, Collector-Emitter Voltage-Max:80 V, Collector Current-Max (IC):1 A, Polarity/Channel Type:NPN, Surface mount:NO, Configuration:SINGLE, Number of Terminals:3, Number of Elements:1, DC Current Gain-Min (hFE):180
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