Rochester Electronics MMBV2101LT1G overview
Rochester Electronics LLC MMBV2101LT1G Varactor, Diode Capacitance-Nom:6.8 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Breakdown Voltage-M...
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Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC MMBV2101LT1G Varactor, Diode Capacitance-Nom:6.8 pF, Power Dissipation-Max:225 mW, Diode Element Material:SILICON, Breakdown Voltage-Min:30 V, Diode Type:VARIABLE CAPACITANCE DIODE, Configuration:SINGLE, Surface Mount:YES, Number of Elements:1
DescriptionRochester Electronics LLC MMBV2101LT1G Varactor, Diode Capacitance-Nom:6.8 pF,Power Dissipation-Max:225 mW,Diode Element Material:SILICON,Breakdown Voltage-Min:30 V,Diode Type:VARIABLE CAPACITANCE DIODE,Configuration:SINGLE,Surface Mount:YES,Number of Elements:1
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