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✓Product overview Rochester Electronics

MWS5114E2

Rochester Electronics ยท Modules

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Rochester Electronics MWS5114E2

Rochester Electronics MWS5114E2 overview

Rochester Electronics LLC MWS5114E2 Sram, Memory Density:4.096 kbit, Memory Width:4, Organization:1KX4, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:250 ns

Manufactured byRochester Electronics
Part number or familyMWS5114E2
Product groupModules

Product details

Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC MWS5114E2 Sram, Memory Density:4.096 kbit, Memory Width:4, Organization:1KX4, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:250 ns
DescriptionRochester Electronics LLC MWS5114E2 Sram, Memory Density:4.096 kbit, Memory Width:4, Organization:1KX4, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:250 ns
DescriptionRochester Electronics LLC MWS5114E2 Sram, Memory Density:4.096 kbit, Memory Width:4, Organization:1KX4, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:250 ns

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Manufactured by Rochester Electronics View Rochester Electronics profile
Product group Modules Explore Modules Explore SRAM Explore Memory
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