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✓Product overview Rochester Electronics

DS1270W-100IND

Rochester Electronics ยท Modules

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Rochester Electronics DS1270W-100IND

Rochester Electronics DS1270W-100IND overview

Rochester Electronics LLC DS1270W-100IND Sram, Memory Density:16.7772 Mbit, Memory Width:8, Organization:2MX8, Supply Voltage-Nom (Vsup):3.3 V, Access Time-Max:...

Manufactured byRochester Electronics
Part number or familyDS1270W-100IND
Product groupModules

Product details

Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC DS1270W-100IND Sram, Memory Density:16.7772 Mbit, Memory Width:8, Organization:2MX8, Supply Voltage-Nom (Vsup):3.3 V, Access Time-Max:100 ns
DescriptionRochester Electronics LLC DS1270W-100IND Sram, Memory Density:16.7772 Mbit, Memory Width:8, Organization:2MX8, Supply Voltage-Nom (Vsup):3.3 V, Access Time-Max:100 ns
DescriptionRochester Electronics LLC DS1270W-100IND Sram, Memory Density:16.7772 Mbit, Memory Width:8, Organization:2MX8, Supply Voltage-Nom (Vsup):3.3 V, Access Time-Max:100 ns

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Manufactured by Rochester Electronics View Rochester Electronics profile
Product group Modules Explore Modules Explore SRAM Explore Memory
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