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✓Product overview Rochester Electronics

DS1230AB-200IND

Rochester Electronics ยท Modules

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Rochester Electronics DS1230AB-200IND

Rochester Electronics DS1230AB-200IND overview

Rochester Electronics LLC DS1230AB-200IND Sram, Memory Density:262.144 kbit, Memory Width:8, Organization:32KX8, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:...

Manufactured byRochester Electronics
Part number or familyDS1230AB-200IND
Product groupModules

Product details

Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC DS1230AB-200IND Sram, Memory Density:262.144 kbit, Memory Width:8, Organization:32KX8, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:200 ns
DescriptionRochester Electronics LLC DS1230AB-200IND Sram, Memory Density:262.144 kbit, Memory Width:8, Organization:32KX8, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:200 ns
DescriptionRochester Electronics LLC DS1230AB-200IND Sram, Memory Density:262.144 kbit, Memory Width:8, Organization:32KX8, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:200 ns

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Manufactured by Rochester Electronics View Rochester Electronics profile
Product group Modules Explore Modules Explore SRAM Explore Memory
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