Rochester Electronics DS1200S overview
Rochester Electronics LLC DS1200S+ Sram, Memory Density:1.024 kbit, Memory Width:8, Organization:128X8, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:125 ns Ro...
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Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC DS1200S+ Sram, Memory Density:1.024 kbit, Memory Width:8, Organization:128X8, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:125 ns
DescriptionRochester Electronics LLC DS1200S Sram, Memory Density:1.024 kbit, Memory Width:8, Organization:128X8, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:125 ns
DescriptionRochester Electronics LLC DS1200S Sram, Memory Density:1.024 kbit, Memory Width:8, Organization:128X8, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:125 ns
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