Rochester Electronics CY7C109BN-12VC overview
Rochester Electronics LLC CY7C109BN-12VC Sram, Memory Density:1.0486 Mbit, Memory Width:8, Organization:128KX8, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:1...
Product details
Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC CY7C109BN-12VC Sram, Memory Density:1.0486 Mbit, Memory Width:8, Organization:128KX8, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:12 ns
DescriptionRochester Electronics LLC CY7C109BN-12VC Sram, Memory Density:1.0486 Mbit, Memory Width:8, Organization:128KX8, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:12 ns
DescriptionRochester Electronics LLC CY7C109BN-12VC Sram, Memory Density:1.0486 Mbit, Memory Width:8, Organization:128KX8, Supply Voltage-Nom (Vsup):5 V, Access Time-Max:12 ns
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