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✓Product overview Rochester Electronics

1N4446.TR

Rochester Electronics ยท Modules

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Rochester Electronics 1N4446.TR

Rochester Electronics 1N4446.TR overview

Rochester Electronics LLC 1N4446.TR Rectifier Diode, Output Current-Max:200 mA, Reverse Recovery Time-Max:4 ns, Power Dissipation-Max:500 mW, Diode Element Mate...

Manufactured byRochester Electronics
Part number or family1N4446.TR
Product groupModules

Product details

Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC 1N4446.TR Rectifier Diode, Output Current-Max:200 mA, Reverse Recovery Time-Max:4 ns, Power Dissipation-Max:500 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:100 V, Number of Elements:1
DescriptionRochester Electronics LLC 1N4446.TR Rectifier Diode, Output Current-Max:200 mA, Reverse Recovery Time-Max:4 ns, Power Dissipation-Max:500 mW, Diode Element Material:SILICON, Diode Type:RECTIFIER DIODE, Configuration:SINGLE, Surface Mount:NO, Rep Pk Reverse Voltage-Max:100 V, Number of Elements:1
DescriptionRochester Electronics LLC 1N4446.TR Rectifier Diode, Output Current-Max:200 mA,Reverse Recovery Time-Max:4 ns,Power Dissipation-Max:500 mW,Diode Element Material:SILICON,Diode Type:RECTIFIER DIODE,Configuration:SINGLE,Surface Mount:NO,Rep Pk Reverse Voltage-Max:100 V,Number of Elements:1

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Manufactured by Rochester Electronics View Rochester Electronics profile
Product group Modules Explore Modules Explore Rectifier Diodes
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