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SPP06N60C3

Rochester Electronics · Modules

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Rochester Electronics SPP06N60C3

Rochester Electronics SPP06N60C3 overview

Rochester Electronics LLC SPP06N60C3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE,...

Manufactured byRochester Electronics
Part number or familySPP06N60C3
Product groupModules

Product details

Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC SPP06N60C3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (ID):6.2 A, Drain-source On Resistance-Max:750 mΩ
DescriptionRochester Electronics LLC SPP06N60C3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (ID):6.2 A,Drain-source On Resistance-Max:750 m?

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Manufactured by Rochester Electronics View Rochester Electronics profile
Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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