SPD02N60C3 by Rochester Electronics | StockCheck

Rochester Electronics SPD02N60C3 overview

Rochester Electronics LLC SPD02N60C3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE...

Manufactured byRochester Electronics

Part number or familySPD02N60C3

Product groupModules

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Manufactured byRochester Electronics

Product groupModules

DescriptionRochester Electronics LLC SPD02N60C3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:600 V, Number of Elements:1, Drain Current-Max (ID):1.8 A, Drain-source On Resistance-Max:3 Ω

DescriptionRochester Electronics LLC SPD02N60C3 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:600 V,Number of Elements:1,Drain Current-Max (ID):1.8 A,Drain-source On Resistance-Max:3 ?

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Manufactured by Rochester Electronics View Rochester Electronics profile

Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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