NTP85N03 by Rochester Electronics | StockCheck

Rochester Electronics NTP85N03 overview

Rochester Electronics LLC NTP85N03 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, N...

Manufactured byRochester Electronics

Part number or familyNTP85N03

Product typeTransistor

Product details

Manufactured byRochester Electronics

Product typeTransistor

DescriptionRochester Electronics LLC NTP85N03 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:NO, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:3, DS Breakdown Voltage-Min:60 V, Number of Elements:1, Drain Current-Max (ID):15 A, Drain-source On Resistance-Max:6.8 mΩ

DescriptionRochester Electronics LLC NTP85N03 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:NO,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:3,DS Breakdown Voltage-Min:60 V,Number of Elements:1,Drain Current-Max (ID):15 A,Drain-source On Resistance-Max:6.8 m?

Manufacturer, product group, and supply

See who makes this product, where it belongs, and where available inventory may be listed.

Manufactured by Rochester Electronics View Rochester Electronics profile

Product type Transistor Explore Transistor Explore Power Field-effect Transistors

Available from Sourcing support available Start a sourcing request