NTMD2C02R2SG by Rochester Electronics | StockCheck

Rochester Electronics NTMD2C02R2SG overview

Rochester Electronics LLC NTMD2C02R2SG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, ...

Manufactured byRochester Electronics

Part number or familyNTMD2C02R2SG

Product groupModules

Product details

Manufactured byRochester Electronics

Product groupModules

DescriptionRochester Electronics LLC NTMD2C02R2SG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (ID):5.2 A, Drain-source On Resistance-Max:43 mΩ

DescriptionRochester Electronics LLC NTMD2C02R2SG Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:20 V,Number of Elements:2,Drain Current-Max (ID):5.2 A,Drain-source On Resistance-Max:43 m?

Manufacturer, product group, and supply

See who makes this product, where it belongs, and where available inventory may be listed.

Manufactured by Rochester Electronics View Rochester Electronics profile

Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

Available from Sourcing support available Start a sourcing request