NTMD2C02R2G by Rochester Electronics | StockCheck

Rochester Electronics NTMD2C02R2G overview

Rochester Electronics LLC NTMD2C02R2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2...

Manufactured byRochester Electronics

Part number or familyNTMD2C02R2G

Product groupModules

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Manufactured byRochester Electronics

Product groupModules

DescriptionRochester Electronics LLC NTMD2C02R2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL, Surface Mount:YES, Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE, Number of Terminals:8, DS Breakdown Voltage-Min:20 V, Number of Elements:2, Drain Current-Max (ID):5.2 A, Drain-source On Resistance-Max:43 mΩ

DescriptionRochester Electronics LLC NTMD2C02R2G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL AND P-CHANNEL,Surface Mount:YES,Configuration:SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE,Number of Terminals:8,DS Breakdown Voltage-Min:20 V,Number of Elements:2,Drain Current-Max (ID):5.2 A,Drain-source On Resistance-Max:43 m?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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