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✓Product overview Rochester Electronics

NTD65N03RT4G

Rochester Electronics · Modules

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Rochester Electronics NTD65N03RT4G

Rochester Electronics NTD65N03RT4G overview

Rochester Electronics LLC NTD65N03RT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIO...

Manufactured byRochester Electronics
Part number or familyNTD65N03RT4G
Product groupModules

Product details

Manufactured byRochester Electronics
Product groupModules
DescriptionRochester Electronics LLC NTD65N03RT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:25 V, Number of Elements:1, Drain Current-Max (ID):32 A, Drain-source On Resistance-Max:14.6 mΩ
DescriptionRochester Electronics LLC NTD65N03RT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:25 V,Number of Elements:1,Drain Current-Max (ID):32 A,Drain-source On Resistance-Max:14.6 m?

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Manufactured by Rochester Electronics View Rochester Electronics profile
Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors
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