NTD60N02RT4G by Rochester Electronics | StockCheck

Rochester Electronics NTD60N02RT4G overview

Rochester Electronics LLC NTD60N02RT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIO...

Manufactured byRochester Electronics

Part number or familyNTD60N02RT4G

Product groupModules

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Manufactured byRochester Electronics

Product groupModules

DescriptionRochester Electronics LLC NTD60N02RT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:25 V, Number of Elements:1, Drain Current-Max (ID):32 A, Drain-source On Resistance-Max:10.5 mΩ

DescriptionRochester Electronics LLC NTD60N02RT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:25 V,Number of Elements:1,Drain Current-Max (ID):32 A,Drain-source On Resistance-Max:10.5 m?

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Product group Modules Explore Modules Explore Transistor Explore Power Field-effect Transistors

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