Rochester Electronics NTB75N03RT4G overview
NTB75N03RT4G is a transistor made by Rochester Electronics. Rochester Electronics LLC NTB75N03RT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:25 V, Number of Elements:1, Drain Current-Max…
Product details
Manufactured byRochester Electronics
Product typeTransistor
DescriptionRochester Electronics LLC NTB75N03RT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:SINGLE WITH BUILT-IN DIODE, Number of Terminals:2, DS Breakdown Voltage-Min:25 V, Number of Elements:1, Drain Current-Max (ID):75 A, Drain-source On Resistance-Max:13 mΩ
DescriptionRochester Electronics LLC NTB75N03RT4G Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:SINGLE WITH BUILT-IN DIODE,Number of Terminals:2,DS Breakdown Voltage-Min:25 V,Number of Elements:1,Drain Current-Max (ID):75 A,Drain-source On Resistance-Max:13 m?
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Rochester Electronics
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