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NILMS4501NR2

Rochester Electronics · Transistor

Rochester Electronics NILMS4501NR2

Rochester Electronics NILMS4501NR2 overview

NILMS4501NR2 is a transistor made by Rochester Electronics. Rochester Electronics LLC NILMS4501NR2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:CURRENT MIRROR WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain…

Manufactured byRochester Electronics
Part number or familyNILMS4501NR2
Product typeTransistor

Product details

Manufactured byRochester Electronics
Product typeTransistor
DescriptionRochester Electronics LLC NILMS4501NR2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:CURRENT MIRROR WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (ID):9.5 A, Drain-source On Resistance-Max:16 mΩ
DescriptionRochester Electronics LLC NILMS4501NR2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:CURRENT MIRROR WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (ID):9.5 A, Drain-source On Resistance-Max:16 mΩ
DescriptionRochester Electronics LLC NILMS4501NR2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:CURRENT MIRROR WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (ID):9.5 A, Drain-source On Resistance-Max:16 mΩ
DescriptionRochester Electronics LLC NILMS4501NR2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:CURRENT MIRROR WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:24 V,Number of Elements:1,Drain Current-Max (ID):9.5 A,Drain-source On Resistance-Max:16 m?

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