Rochester Electronics NILMS4501NR2 overview
NILMS4501NR2 is a transistor made by Rochester Electronics. Rochester Electronics LLC NILMS4501NR2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:CURRENT MIRROR WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain…
Product details
Manufactured byRochester Electronics
Product typeTransistor
DescriptionRochester Electronics LLC NILMS4501NR2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:CURRENT MIRROR WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (ID):9.5 A, Drain-source On Resistance-Max:16 mΩ
DescriptionRochester Electronics LLC NILMS4501NR2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:CURRENT MIRROR WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (ID):9.5 A, Drain-source On Resistance-Max:16 mΩ
DescriptionRochester Electronics LLC NILMS4501NR2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL, Surface Mount:YES, Configuration:CURRENT MIRROR WITH BUILT-IN DIODE, Number of Terminals:4, DS Breakdown Voltage-Min:24 V, Number of Elements:1, Drain Current-Max (ID):9.5 A, Drain-source On Resistance-Max:16 mΩ
DescriptionRochester Electronics LLC NILMS4501NR2 Power Field-effect Transistor, Polarity/Channel Type:N-CHANNEL,Surface Mount:YES,Configuration:CURRENT MIRROR WITH BUILT-IN DIODE,Number of Terminals:4,DS Breakdown Voltage-Min:24 V,Number of Elements:1,Drain Current-Max (ID):9.5 A,Drain-source On Resistance-Max:16 m?
Manufacturer, product group, and supply
See who makes this product, where it belongs, and where available inventory may be listed.
Manufactured by
Rochester Electronics
View Rochester Electronics profile
Available from
Sourcing support available
Start a sourcing request
